Epitaxy and the Process of Silicon Wafer

For silicon wafer processing a wafer needs to meet certain quality specifications, like chemical, mechanical, surface specifications, and electrical specifications. It is important that Epi wafer undergo these quality criteria so a wafer is marked as defect-free and of excellent quality. For different electronic applications, there is the use of high-quality wafers in semiconductor manufacturing. To guarantee that the devices produced are efficient it goes through a series of thorough processing, including epitaxial growth. This article depicts epitaxial growth and its significance in manufacturing semiconductors.

Epitaxial Growth or Epitaxy

Epitaxy plays an important role in silicon wafer processing for semiconductor applications. Epitaxial growth or epitaxy is a process in which over a single crystal substrate a fine layer of single-crystal material is transferred along with the help of chemical vapor deposition. Epitaxy is performed to boost and develop the performance of bipolar devices. It helps in giving good control to the doping concentration of the devices, therefore making the layers oxygen and carbon-free. An example is the deposition of silicon over a silicon substrate. Epi wafer suppliers are present everywhere to supply good quality wafers.

Silicon Wafer Processing

In producing high-quality wafers meticulous and thorough silicon wafer processing plays a huge role. We provide premium quality wafers at an affordable price at wafer world.

Finishing of the Process

With the use of an epitaxial reactor, the chemical vapor deposition of epitaxial growth is attained. It consists of a quartz reaction where a susceptor is placed. To the wafers, the susceptor provides mechanical support and with thermal distribution, it creates an environment. At high temperatures, an epitaxial deposition is performed which allows gasses to flow into the chamber. In Silicon epitaxy, it is observed that over thickly-doped silicon substrate there is the involvement of growing a thinly doped epi layer. Across the collector-substrate junction, this is done to achieve a higher disintegration voltage along with keeping low collector resistance. A higher operating speed is permitted by a lower collector resistance by using the same level of current. From Epi wafer manufacturer you can easily manufacture wafers according to your requirements.